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第五代無線通信系統(tǒng)旨在為越來越多的用戶在未來幾年中提供顯著增加的數(shù)據(jù)速率和容量.為了滿足這些5G的期望,正在研究各種新的架構(gòu)和適用的石英晶振產(chǎn)品.多輸入多輸出(MIMO)或多天線技術(shù)是目前正在為不遠(yuǎn)的未來的5G系統(tǒng)開發(fā)的技術(shù)之一.

對(duì)于濾波器為窄帶,允許的補(bǔ)充電容必須大于或等于零.最大無電感帶寬是補(bǔ)充電容等于零的帶寬,是可以實(shí)現(xiàn)窄帶設(shè)計(jì)的最大帶寬.諧振器等效電路的電容比C0/C1確定該最大帶寬.對(duì)于使用基模AT切諧振器的陶瓷諧振器,在理想條件下,該最大帶寬約為中心頻率的0.32％.在帶寬超過此限制時(shí),必須更改網(wǎng)絡(luò)設(shè)計(jì),以包含與晶體諧振器并聯(lián)的電感器.

說到智能家電,大家腦袋里出現(xiàn)的可能還是電視,冰箱這種傳統(tǒng)家電,由于AI的出現(xiàn),智能家電同樣出現(xiàn)了新的生態(tài)圈.即,您可以通過使用有源晶振的智能音箱來控制這些產(chǎn)品,其中的佼佼者就是我們今天要說到的小愛藍(lán)牙音箱了

還記得25針并行打印機(jī)電纜嗎?它完成了它的設(shè)計(jì)目的:將一臺(tái)有著石英晶振的打印機(jī)連接到一臺(tái)計(jì)算機(jī).如果你聰明,你可以添加一個(gè)開關(guān)盒來連接多個(gè)打印機(jī)或其他設(shè)備,如掃描儀.當(dāng)通過專用終端或主計(jì)算機(jī)在局域網(wǎng)中設(shè)置該打印機(jī)時(shí),幾乎肯定需要每周重置一次.持續(xù)停機(jī)會(huì)影響生產(chǎn)力.更新新的用戶共享權(quán)限和解決安全問題也很耗時(shí).

CXOU四腳貼片晶振,CXOL千赫石英晶振,CXOLAT高精度有源晶振,CXOLHG高沖擊石英晶振,CXOLP低功耗有源晶振,CXOQ四腳千赫晶振,CXOQHG高沖擊2520晶振,STXO兆赫石英晶振,CXOX金屬面3225晶振,CXOXHT高溫SMD晶振

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       ECX-P33BN-16.384高精密晶振ECS-2018-080-BN低抖動(dòng)晶振ECS-1633-192-BN-TR美國(guó)伊西斯晶振ECS-3525-320-B-TR伊西斯晶振ECS-3225S18-200-FN-TR有源晶振ECS-.327-12.5-39-TR伊西斯晶振ECS-250-20-3X-TR晶振ECX-P33BN-24.576低抖動(dòng)晶振ECS-2018-240-BN有源石英晶振ECS-3518-240-B-TR高精密晶振ECS-VXO-73-27.00-TR晶體振蕩器ECS-3953M-500-BN-TR石英晶振ECS-240-16-5PX-TR無源晶振ECS-3X8耐高溫晶振ECS-120-20-3X-TR石英晶體ECX-P33BN-25.000高精密晶振ECS-3525-1000-B-TR伊西斯SMD晶振ECS-3518-400-B-TR有源石英晶振ECS-2033-160-BN大體積晶振ECS-3953M-040-BN-TR貼片晶振ECS-92.1-S-5PX-TR伊西斯晶振ECS-40-18-5PXEN-TR低損耗晶振ECS-160-20-3X-TR無源晶振ECS-2033-240-BN大體積晶振ECS-3953M-018-BN-TR進(jìn)口晶體振蕩器ECS-73-S-5PX-TR石英晶振ECS-76.8-18-5PXEN-TR高品質(zhì)晶振ECS-143-20-3X-TR伊西斯晶振ECX-P33BN-27.000石英貼片晶振ECS-3525-1250-B-TR有源晶振ECS-3951M-160-BN-TR美國(guó)伊西斯晶振ECS-1618-120-BN-TR小體積貼片晶振ECS-3953M-200-BN-TR石英晶體振蕩器ECS-3225S25-240-FN-TR貼片晶振ECS-98.3-18-5PXEN-TR晶振ECS-147.4-20-3X-TR石英晶振ECX-L32CM-14.7456石英貼片晶振ECS-3963-1000-AU-TR石英晶體振蕩器ECS-3953M-080-AU-TR有源晶振ECS-1618-192-BN-TR有源石英晶振ECS-3953M-480-AU-TR有源晶振ECS-3225S25-250-FN-TR進(jìn)口晶體振蕩器ECS-42-18-5PXEN-TR石英晶體ECX-P33BN-250.000石英貼片晶振ECS-3963-1000-BN-TR美國(guó)伊西斯晶振ECX-L32CM-150.000高頻晶振ECX-P33BN-18.432有源石英晶振ECS-2018-147.4-BN高精密晶振ECS-1633-240-BN-TR有源晶振ECS-3525-400-B-TR石英晶振ECS-3225S18-240-FN-TR美國(guó)進(jìn)口晶振ECS-240-10-37Q-ES-TR石英晶振ECS-286.3-20-3X-EN-TR高品質(zhì)晶振ECX-L32CM-155.520高頻晶振ECX-P33BN-20.000伊西斯SMD晶振ECS-2018-160-BN有源石英晶振ECS-1633-260-BN-TR石英晶體振蕩器ECS-3525-480-B-TR貼片晶振ECS-3225S18-270-FN-TR伊西斯晶振ECS-250-10-37Q-ES-TR美國(guó)進(jìn)口晶振ECS-300-20-3X-EN-TR晶振ECX-L32CM-156.250高頻晶振

      ECX-P33BN-200.000美國(guó)伊西斯晶振ECS-TXO-5032-120-TR伊西斯SMD晶振ECS-1618-480-BN-TR低抖動(dòng)晶振ECS-3525-600-B-TR進(jìn)口晶體振蕩器ECS-3225S18-320-FN-TR石英晶振ECS-260-10-37Q-ES-TR耐高溫晶振ECS-240-20-5PX-TR石英晶體ECX-L32CM-16.000有源晶振ECX-P33BN-212.500有源晶振ECS-TXO-5032-160-TR美國(guó)ECS晶振ECS-3963-480-AU-TR高精密晶振ECS-3518-040-B-TR石英晶體振蕩器ECS-3225S18-400-FN-TR貼片晶振ECS-.327-12.5-34QCS-TR低損耗晶振ECS-60-32-5PX-TR無源晶振ECX-L32CM-16.384有源晶振ECS-200-20-3X-TR耐高溫晶振ECX-L32CM-148.500高頻晶振ECX-P33BN-24.000石英晶體振蕩器ECS-TXO-3225-100-TR有源晶振ECS-2033-040-AU有源石英晶振ECS-3518-080-B-TR有源晶振ECS-3953M-480-B-TR進(jìn)口晶體振蕩器ECS-42-12-5PX-TR高品質(zhì)晶振ECS-73-20-5PX-TR伊西斯晶振ECX-L32CM-18.432有源晶振ECS-3X8X石英晶振ECS-TXO-3225-200-TR石英晶體振蕩器ECS-3961-240-AU-TR伊西斯SMD晶振ECS-3953M-800-B-TR晶體振蕩器ECS-3953M-250-B-TR石英晶體振蕩器ECS-122.8-20-5PX-TR晶振ECS-92.1-20-5PX-TR石英晶振ECX-L32CM-20.000有源晶振ECS-.327-12.5-13美國(guó)進(jìn)口晶振ECS-2018-300-BN低抖動(dòng)晶振ECS-2033-240-AU美國(guó)伊西斯晶振ECS-VXO-73-32.768-TR大體積晶振ECS-3953M-080-B-TR有源晶振ECS-80-S-5PX-TR石英晶體ECS-40-S-5PX-TR美國(guó)進(jìn)口晶振ECX-L32CM-200.000高頻晶振ECS-40-20-5PXDN-TR無源晶振ECS-2018-250-BN高精密晶振ECS-3963-270-AU-TR有源晶振ECS-VXO-73-19.440-TR晶體振蕩器ECS-3953M-100-B-TR美國(guó)進(jìn)口晶振ECS-120-20-3X-EN-TR低損耗晶振ECS-160-S-5PX-TR耐高溫晶振ECS-80-18-5PXDN-TR伊西斯晶振ECS-2033-143-AU石英晶體振蕩器ECS-60-20-5PX-TR晶振ECS-3953M-240-B-TR伊西斯晶振ECS-200-20-3X-EN-TR高品質(zhì)晶振ECS-2033-320-AU低抖動(dòng)晶振ECS-184-S-5PX-TR石英晶體ECS-3518-143-B-TR伊西斯SMD晶振ECS-184-20-3X-TR美國(guó)進(jìn)口晶振ECX-L32CM-148.3516高頻晶振ECX-P33BN-16.000低抖動(dòng)晶振ECS-3953M-400-AU-TR石英晶體振蕩器ECS-1618-260-BN-TR伊西斯SMD晶振ECS-3525-200-B-TR美國(guó)進(jìn)口晶振ECS-3225S18-160-FN-TR石英晶體振蕩器ECS-120-20-46X無源晶振ECS-245.7-20-3X-TR低損耗晶振