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蘋(píng)果手機(jī)A16芯片晶體管性能提升多少SG3225VAN愛(ài)普生LVDS差分晶振X1G004241015600

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蘋(píng)果手機(jī)A16芯片晶體管性能提升多少SG3225VAN愛(ài)普生LVDS差分晶振X1G004241015600

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瀏覽：- 發(fā)布日期：2022-09-24 10:07:02【大中小】

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蘋(píng)果手機(jī)A16芯片晶體管性能提升多少SG3225VAN愛(ài)普生LVDS差分晶振X1G004241015600

蘋(píng)果在發(fā)布會(huì)上說(shuō),A16Bionic著力于3個(gè)部分,分別是能效powerefficiency、顯示display和攝像頭camera.拋開(kāi)后兩個(gè)不談,只說(shuō)能效而不說(shuō)性能,或許說(shuō)明了A16單純?cè)谛阅苌系奶嵘⒉淮?/span>-我們此前說(shuō)A15以及相同CPU微架構(gòu)的M2的CPU性能提升就不算特別大.愛(ài)普生晶振這是否表明了蘋(píng)果這兩年在芯片設(shè)計(jì)上遇到了瓶頸?當(dāng)然能效上的打磨價(jià)值也非常大,這也一直是蘋(píng)果的優(yōu)勢(shì).前不久還談過(guò)今年更早的那批所謂的4nm芯片大概率都是假4nm,而A16極有可能才是真4nm,是不是應(yīng)該有點(diǎn)滿(mǎn)意?

SG3225VAN愛(ài)普生晶振X1G004241015600,蘋(píng)果手機(jī)A16芯片晶體

愛(ài)普生有源晶振編碼	型號(hào)	頻率	長(zhǎng)X寬X高	輸出波	電源電壓	工作溫度	頻差
X1G004241014800	SG3225VAN	116.713000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241014900	SG3225VAN	322.265625 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241015000	SG3225VAN	133.333333 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241015100	SG3225VAN	108.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241015300	SG3225VAN	300.120000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241015400	SG3225VAN	160.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241015500	SG3225VAN	148.351648 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241015600	SG3225VAN	250.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241015800	SG3225VAN	243.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241016200	SG3225VAN	148.351648 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-20 ppm
X1G004241016300	SG3225VAN	108.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-20 ppm
X1G004241016400	SG3225VAN	148.351600 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-20 ppm
X1G004241016500	SG3225VAN	625.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241016700	SG3225VAN	144.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241016900	SG3225VAN	415.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241017100	SG3225VAN	128.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-50 ppm
X1G004241017200	SG3225VAN	128.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241017300	SG3225VAN	161.132812 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241017400	SG3225VAN	656.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241018000	SG3225VAN	657.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241018100	SG3225VAN	625.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-30 ppm
X1G004241018400	SG3225VAN	148.350000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-40 to 85 °C	+/-50 ppm
X1G004241018500	SG3225VAN	300.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-20 ppm
X1G004241018700	SG3225VAN	234.375000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-30 ppm
X1G004241018800	SG3225VAN	117.187500 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.250 to 3.630 V	-20 to 70 °C	+/-30 ppm

蘋(píng)果A16堆了160億個(gè)晶體管——A15實(shí)則也有150億晶體管,以及這顆新的SoC芯片在顯示引擎和ISP上下了點(diǎn)工夫,那么堆料上能夠分派給CPU、GPU的余地也就不大了.石英晶振所以性能提升真的不做好.不過(guò)A16用上了臺(tái)積電的4nm工藝,比5nm先進(jìn)不是?今年蘋(píng)果iPhone14系列新品發(fā)布會(huì),談到A16芯片的部分信息算是很少；連往常都要出面談兩句Apple Silicon架構(gòu)的Johny Srouji都沒(méi)出現(xiàn),就A16芯片都沒(méi)有怎么介紹,實(shí)在是手機(jī)APSoC愛(ài)好者的不理解.